Micron’s DRAM Update: More Capacity, Four More 10nm-Class Nodes, EUV, 64 GB DIMMs

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During its earnings conference call with investors and financial analysts earlier this week, Micron expressed confidence in its long-term future and strong demand for its products as new applications emerge in various fields in the coming years. The company also outlined its plans to expand capacities and rapidly shift to more advanced process technologies.

“We are confident that the long-term demand outlook for memory and storage is compelling, driven by broad secular trends such as AI, autonomous vehicles, 5G, and IoT,” said Sanjay Mehrotra, CEO of Micron. “The new Micron is well positioned to take advantage of these trends, with innovative products, a responsive supply chain, and well-established relationships with customers worldwide.”

Prices of DRAM have declined rather dramatically in the recent quarters as supply exceeds demand. To cut down on costs and to prepare for the emergence of new applications that will need memory, DRAM makers are aggressively transitioning to newer process technologies. Meanwhile, while admitting that they need to balance DRAMs supply and demand, they actually set up aggressive plans for expansion for their production capacities because they need more cleanroom space for upcoming manufacturing technologies.

Micron has an aggressive roadmap when it comes to fabrication proceses that includes four more 10 nm-class nodes (i.e., for a total of six 10 nm class technologies), and the company is researching an eventual transition to extreme ultraviolet lithography (EUVL). That being said, the company is also expanding its production capacities in a bid to produce next-gen memories for next-gen applications. The company is currently exploiting the fruits of its latest process technology by preparing 32 GB memory modules for client systems as well as 64 GB DIMMs for servers.

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